IEC 60747-9 Ed. 3.0 b PDF
IEC 60747-9 Ed. 3.0 b PDF
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IEC 60747-9 Ed. 3.0 b PDF

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Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

Published byPublication DateNumber of Pages
IEC11/13/2019160
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IEC 60747-9 Ed. 3.0 b – Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)

IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

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