IEC 60747-9 Ed. 3.0 b PDF
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Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Published by | Publication Date | Number of Pages |
IEC | 11/13/2019 | 160 |
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IEC 60747-9 Ed. 3.0 b – Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
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