IEC 60747-8-1 Ed. 1.0 b PDF
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Semiconductor devices – Discrete devices – Part 8: Field-effect transistors – Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz
Published by | Publication Date | Number of Pages |
IEC | 12/30/1987 | 33 |
IEC 60747-8-1 Ed. 1.0 b – Semiconductor devices – Discrete devices – Part 8: Field-effecttransistors – Section One: Blank detail specification for single-gate field-effect transistors up to 5 W and 1 GHz
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