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JEDEC JES 2 PDF
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TRANSISTOR, GALLIUM ARSENIDE POWER FET, GENERIC SPECIFICATION
| Published by | Publication Date | Number of Pages |
| JEDEC | 07/01/1992 | 53 |
JEDEC JES 2 – TRANSISTOR, GALLIUM ARSENIDE POWER FET, GENERIC SPECIFICATION
Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips.
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