Your shopping cart is empty!
IEC 63275-2 Ed. 1.0 b PDF
Product Code:
Availability:
Availability:
product
In Stock
In Stock
$28.05
$51.00
IN TAX $28.05
IN TAX $28.05
Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
| Published by | Publication Date | Number of Pages |
| IEC | 05/01/2022 | 24 |
Preview
IEC 63275-2 Ed. 1.0 b – Semiconductor devices – Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Worldwide Standards PDF © 2024
Reviews (0)