IEC 62047-25 Ed. 1.0 b PDF
IEC 62047-25 Ed. 1.0 b PDF
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IEC 62047-25 Ed. 1.0 b PDF

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Semiconductor devices – Micro-electromechanical devices – Part 25: Silicon based MEMS fabrication technology – Measurement method of pull-press and shearing strength of micro bonding area

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IEC08/29/201645
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IEC 62047-25 Ed. 1.0 b – Semiconductor devices – Micro-electromechanical devices – Part 25: Silicon based MEMS fabrication technology – Measurement method of pull-press and shearing strength of micro bonding area

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

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