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IEC 62047-16 Ed. 1.0 b PDF
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Semiconductor devices – Micro-electromechanical devices – Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
| Published by | Publication Date | Number of Pages |
| IEC | 03/05/2015 | 21 |
IEC 62047-16 Ed. 1.0 b – Semiconductor devices – Micro-electromechanical devices – Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.
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