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IEC 62373-1 Ed. 1.0 b PDF
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Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET
| Published by | Publication Date | Number of Pages |
| IEC | 07/15/2020 | 44 |
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IEC 62373-1 Ed. 1.0 b – Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
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