ESD TR5.4-03 PDF
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ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing – Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing – Component Level, Supply Transient Stimulation
Published by | Publication Date | Number of Pages |
ESD | 2011 | 36 |
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ESD TR5.4-03 – ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing – Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing – Component Level, Supply Transient Stimulation
The information and procedures defined in this technical report may be used to search for latch-up sensitive layouts within integrated circuits. The stress levels and stimuli parameter values defined may be used for a wide range of devices.Levels and values can be scaled up or down to suit the requirements of the actual device under test and types of transient stimuli being used.
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