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ASTM F996 PDF
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Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
| Published by | Publication Date | Number of Pages |
| ASTM | 03/01/2018 | 7 |
ASTM F996 – Standard Test Method forSeparating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using theSubthreshold Current-Voltage Characteristics
1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.2,3,4 The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔV it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.
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