ASTM F1404 PDF

Test Method for Crystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique (Withdrawn 2016)

ASTM F1404 – Test Method forCrystallographic Perfection of Gallium Arsenide by Molten Potassium Hydroxide (KOH) Etch Technique (Withdrawn 2016)

1.1 This test method is used to determine whether an ingot or wafer of gallium arsenide is monocrystalline and, if so, to measurethe etch pit density and to judge the nature of crystal imperfections. Tothe extent possible, it follows the corresponding test method for silicon,Test Method F 47. Test Method F 47 also presents the definition of many crystallographic terms,applicable to this test method.

1.2 This procedure is suitable for gallium arsenide crystals with etch pit densities between 0 and 200 000/cm².

1.3 Gallium arsenide, either doped or undoped, and with various electrical properties, may be evaluated by this test method.The front surface normal direction of the sample must be parallel to the <001>within ± 5° and must be suitably prepared by polishing or etching,or both. Unremoved processing damage may lead to etch pits, obscuring thequality of the bulk crystal.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibilityof the user of this standard to establish appropriate safety and health practicesand to determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.